Trench MOSFET：
Key Features
•High cell density design
•Ideal for miniaturized packages
•G-S ESD protection embedded
•Voltage range: 12V-200V
SGT MOSFET
Key Features
•Advance shield gate trench technology
•Ultra low gate charge
•High power integration
•Voltage range: 30V-250V
| Part No. | Package | VDS(V) | VGSMax(V) | ID(A)@TA= 25℃(Max.) |
RDS(on)(mΩ) @VGS=10V(Max.) |
RDS(on)(mΩ) @VGS=4.5V(Typ.) |
RDS(on)(mΩ) @VGS=4.5V(Max.) |
Data sheet |
|---|---|---|---|---|---|---|---|---|
| WM02DN080C | DFN2*3-6L | 20 | ±12 | 8 | / | / | 15.5 | 资料下载 |
| WM02DN085C | DFN2*3-6L | 20 | ±12 | 8.5 | 0.62 | / | 8.2 | 资料下载 |
| WM02DN095C | DFN2*3-6L | 20 | ±12 | 9.5 | 0.62 | / | 7.4 | 资料下载 |
| WM02DN110CS | DFN2030-6L | 20 | ±12 | 12 | 0.65 | / | 7.2 | 资料下载 |
| WM02DN560QC | DFN3030-8L | 20 | ±12 | 20 | 0.65 | / | 5.4 | 资料下载 |
| WM6C61042A | CSP2.14*1.67 | 12 | ±10 | 8 | 0.9 | / | 5.3 | 资料下载 |
| WMAC62025A | WLCSP3.2*2.1-10L | 24 | ±10 | 30 | 0.8 | / | 3.1 | 资料下载 |
| WMB02DN10T1 | PDFN5*6-8L | 100 | ±20 | 2.5 | 1.5 | 290 | 310 | 资料下载 |
| WMB03DN06T1 | PDFN5*6-8L | 60 | ±20 | 3.5 | 1.3 | 100 | 110 | 资料下载 |
| WMB26DN06TS | PDFN5*6-8L | 60 | ±20 | 26 | 1.7 | 32 | 40 | 资料下载 |
| WMB36DH04TS | PDFN5060-8L | 40 | ±20 | 36 | 1.6 | 13 | 16 | 资料下载 |
| WMB38DH03TS | PDFN5060-8L | 30 | ±20 | 38 | 1.5 | 10.5 | 15 | 资料下载 |
| WMB042DN03LG2 | PDFN5*6-8L | 30 | ±20 | 45 | 1.7 | 5.5 | 9 | 资料下载 |
| WMB050DN03LG4 | PDFN5060-8L | 30 | ±20 | 49 | 1.6 | 6.5 | 8.5 | 资料下载 |
| WMB070DN04LG4 | PDFN5060-8L | 40 | ±20 | 43 | 1.6 | 8.4 | 11 | 资料下载 |
| WMB090DN04LG4 | PDFN5060-8L | 40 | ±20 | 37 | 1.55 | 10 | 13 | 资料下载 |
| WMB090DNV6LG4 | PDFN5*6-8L | 65 | ±20 | 35 | 1.7 | 9.5 | 14 | 资料下载 |
| WMB105DN08LG4 | PDFN5060-8L | 80 | ±20 | 48 | 1.8 | 12.5 | 15.5 | 资料下载 |
| WMB140DNV6LG4 | PDFN5*6-8L | 65 | ±20 | 25 | 1.7 | 15 | 19 | 资料下载 |
| WMB175DN10LG4 | PDFN5*6-8L | 100 | ±20 | 33 | 1.7 | 19 | 25 | 资料下载 |
| WMB180DNV6LG4 | PDFN5060-8L | 65 | ±20 | 26 | 1.6 | 19.5 | 25.5 | 资料下载 |
