Trench MOSFET：
Key Features
•High cell density design
•Ideal for miniaturized packages
•G-S ESD protection embedded
•Voltage range: 12V-200V
SGT MOSFET
Key Features
•Advance shield gate trench technology
•Ultra low gate charge
•High power integration
•Voltage range: 30V-250V
| Part No. | Package | VDS(V) | VGSMax(V) | ID(A)@TA= 25℃(Max.) |
RDS(on)(mΩ) @VGS=10V(Max.) |
RDS(on)(mΩ) @VGS=4.5V(Typ.) |
RDS(on)(mΩ) @VGS=4.5V(Max.) |
Data sheet |
|---|---|---|---|---|---|---|---|---|
| WMB09N25JN | PDFN5x6 | 250 | ±20 | 7 | 3.5 | 360 | NA | 资料下载 |
| WMB010N04HG4 | PDFN5060-8L | 40 | ±20 | 255 | 3 | 1.1 | / | 资料下载 |
| WMB010N04LG4 | PDFN5*6-8L | 40 | ±20 | 200 | 1.7 | 1 | 1.4 | 资料下载 |
| WMB013N03LG4 | PDFN5060-8L | 30 | ±20 | 243 | 1.7 | 1.2 | 1.7 | 资料下载 |
| WMB014N04HG4 | PDFN5060-8L | 40 | ±20 | 167 | 3 | 1.4 | / | 资料下载 |
| WMB014N04LG4 | PDFN5*6-8L | 40 | ±20 | 300 | 1.7 | 1.6 | 2 | 资料下载 |
| WMO15N25T2 | TO-252 | 250 | ±20 | 15 | 2 | 238 | 270 | 资料下载 |
| WMB014N06HG4 | PDFN5*6-8L | 60 | ±20 | 278 | 2.9 | 1.4 | / | 资料下载 |
| WMB014N06LG4 | PDFN5*6-8L | 60 | ±20 | 278 | 1.6 | 1.4 | 1.95 | 资料下载 |
| WMB018N03LG4 | PDFN5060-8L | 30 | ±20 | 168 | 1.7 | 1.8 | 2.7 | 资料下载 |
| WMB018N04HG4 | PDFN5060-8L | 40 | ±20 | 200 | 3 | 1.7 | / | 资料下载 |
| WMB018N04LG4 | PDFN5060-8L | 40 | ±20 | 200 | 1.7 | 1.7 | 2.3 | 资料下载 |
| WMB020N06HG4 | PDFN5*6-8L | 60 | ±20 | 174 | 2.8 | 2.2 | / | 资料下载 |
| WMB020N06LG4 | PDFN5060-8L | 60 | ±20 | 182 | 1.8 | 2.1 | 2.8 | 资料下载 |
| WMB025N06HG4 | PDFN5*6-8L | 60 | ±20 | 135 | 3 | 2.8 | / | 资料下载 |
| WMB025N06LG4 | PDFN5*6-8L | 60 | ±20 | 130 | 1.6 | 2.6 | 3.6 | 资料下载 |
| WMB027N08HG4 | PDFN5*6-8L | 80 | ±20 | 195 | 3 | 2.7 | / | 资料下载 |
| WMB028N04HG4 | PDFN5060-8L | 40 | ±20 | 132 | 3 | 2.8 | / | 资料下载 |
| WMB028N04LG4 | PDFN5060-8L | 40 | ±20 | 132 | 1.7 | 2.5 | 3.6 | 资料下载 |
| WMB030N10HGD | PDFN5060-8L | 100 | ±20 | 176 | 3 | 3.2 | / | 资料下载 |
| WMB036N03LG4 | PDFN5060-8L | 30 | ±20 | 86 | 1.6 | 3.6 | 5.5 | 资料下载 |
