深圳市吉和盛实业有限公司
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20V-250V Trench N Channel Power MOSFET
20V-250V Trench N Channel Power MOSFET

Trench MOSFET:

Key Features

•High cell density design

•Ideal for miniaturized packages

•G-S ESD protection embedded

•Voltage range: 12V-200V


SGT MOSFET

Key Features

•Advance shield gate trench technology

•Ultra low gate charge

•High power integration

•Voltage range: 30V-250V

产品介绍
Part No. Package VDS(V) VGSMax(V) ID(A)@TA=
25℃(Max.)
RDS(on)(mΩ)
@VGS=10V(Max.)
RDS(on)(mΩ)
@VGS=4.5V(Typ.)
RDS(on)(mΩ)
@VGS=4.5V(Max.)
Data sheet
WMB56N04T1 PDFN5*6-8L 40 ±20 56 1.75 7.6 15 资料下载
WMB58N03T1 PDFN5*6-8L 30 ±20 58 1.7 8.5 14 资料下载
WMB70N04T1 PDFN5*6-8L 40 ±20 70 1.5 6.5 8.5 资料下载
WMB81N03T1 PDFN5*6-8L 30 ±20 81 1.7 5.5 9 资料下载
WMK28N15T2 TO-220 150 ±20 28 3 48 / 资料下载
WML15N25T2 TO-220F 250 ±20 15 2 238 270 资料下载
WMO15N25T2 TO-252 250 ±20 15 2 238 270 资料下载
WMO18N20T2 TO-252 200 ±20 18 2 130 150 资料下载
WM03N115A SOP-8L 30 ±20 11.5 1.5 8 11 资料下载
WMO80N03TA TO-252 30 ±20 80 1.6 5.5 8.5 资料下载
WMQ40N03TA PDFN3030-8L 30 ±20 59 1.6 5.5 8.5 资料下载
WMQ90N03TA PDFN3030-8L 30 ±20 96 1.65 3 4.5 资料下载
WMAC61020B CSP2.98*1.49-10L 12 ±8 14 0.9 / 2.7 资料下载
WMO100N03TB TO-252 30 ±20 100 1.65 4 6 资料下载
WMR14N03TB DFN2*2-6L 30 ±20 14 1.5 7.5 10.5 资料下载
WM02DN080C DFN2030-6L 20 ±12 8 / / 15.5 资料下载
WMO15N10TC TO-252 100 ±20 15 1.6 110 120 资料下载
WMO30N10TSH TO-252 100 ±20 30 3 38 / 资料下载
WMO80N06TSL TO-252 -60 ±20 80 1.6 8 10 资料下载
WMB26N06TS PDFN5*6-8L 60 ±20 25 1.7 32 40 资料下载
WMB40N04TS PDFN5*6-8L 40 ±20 40 1.6 12.5 20 资料下载
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