Trench MOSFET：
Key Features
•High cell density design
•Ideal for miniaturized packages
•G-S ESD protection embedded
•Voltage range: 12V-200V
SGT MOSFET
Key Features
•Advance shield gate trench technology
•Ultra low gate charge
•High power integration
•Voltage range: 30V-250V
| Part No. | Package | VDS(V) | VGSMax(V) | ID(A)@TA= 25℃(Max.) |
RDS(on)(mΩ) @VGS=10V(Max.) |
RDS(on)(mΩ) @VGS=4.5V(Typ.) |
RDS(on)(mΩ) @VGS=4.5V(Max.) |
Data sheet |
|---|---|---|---|---|---|---|---|---|
| WM03P91A | SOP-8L | -30 | ±20 | -9.1 | -1.5 | 17 | 25 | 资料下载 |
| WM02P160R | DFN2*2-6L | -20 | ±10 | -16 | -0.6 | / | 17 | 资料下载 |
| WM03P115R | DFN2*2-6L | -30 | ±20 | -11.5 | -1.6 | 24 | 34 | 资料下载 |
| WMM50P04T1 | TO-263 | -40 | ±20 | -55 | -1.6 | 13 | 20 | 资料下载 |
| WMO12P05T1 | TO-252 | -55 | ±20 | -12 | -1.7 | 170 | 195 | 资料下载 |
| WMO13P06T1 | TO-252 | -60 | ±20 | -13 | -1.6 | 90 | 128 | 资料下载 |
| WMO20P04T1 | TO-252 | -40 | ±20 | -25 | -1.7 | 40 | 52 | 资料下载 |
| WMO25P06T1 | TO-252 | -60 | ±20 | -25 | -1.7 | 40 | 55 | 资料下载 |
| WMO35P04T1 | TO-252 | -40 | ±20 | -32 | -1.6 | 20 | 25 | 资料下载 |
| WMO50P03T1 | TO-252 | -30 | ±20 | -50 | -1.7 | 14 | 22 | 资料下载 |
| WMO50P04T1 | TO-252 | -40 | ±20 | -50 | -1.6 | 13 | 20 | 资料下载 |
| WMQ25P03T1 | PDFN3030-8L | -30 | ±20 | -25 | -1.5 | 19 | 29 | 资料下载 |
| WMQ25P04T1 | PDFN3*3-8L | -40 | ±20 | -25 | -1.6 | 19 | 25 | 资料下载 |
| WMQ30P03T1 | PDFN3030-8L | -30 | ±20 | -30 | -1.6 | 15 | 24 | 资料下载 |
| WMQ30P04T1 | PDFN3*3-8L | -40 | ±20 | -30 | -1.6 | 13 | 20 | 资料下载 |
| WMQ42P03T1 | PDFN3*3-8L | -30 | ±20 | -42 | -1.5 | 9.6 | 13.5 | 资料下载 |
| WMB60P03TA | PDFN5*6-8L | -30 | ±20 | -60 | -1.5 | 6.8 | 10.5 | 资料下载 |
| WMB30P10TS | PDFN5060-8L | -100 | ±20 | -30 | -1.7 | 52 | 60 | 资料下载 |
| WMB35P06TS | PDFN5*6-8L | -60 | ±20 | -35 | -1.6 | 23 | 32 | 资料下载 |
| WMB45N06TS | PDFN5060-8L | 60 | ±20 | 47 | 1.8 | 14 | 16 | 资料下载 |
| WMB47N03TS | PDFN5060-8L | 30 | ±20 | 47 | 1.65 | 9.8 | 15.5 | 资料下载 |
